Optospintronics in Graphene via Proximity Coupling

نویسندگان

  • Ahmet Avsar
  • Dmitrii Unuchek
  • Jiawei Liu
  • Oriol Lopez Sanchez
  • Kenji Watanabe
  • Takashi Taniguchi
  • Barbaros Özyilmaz
  • Andras Kis
چکیده

The observation of micrometer size spin relaxation makes graphene a promising material for applications in spintronics requiring long-distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the spin injection efficiencies and hence prevent the material from achieving its full potential. While this major issue could be eliminated by nondestructive direct optical spin injection schemes, graphene's intrinsically low spin-orbit coupling strength and optical absorption place an obstacle in their realization. We overcome this challenge by creating sharp artificial interfaces between graphene and WSe2 monolayers. Application of circularly polarized light activates the spin-polarized charge carriers in the WSe2 layer due to its spin-coupled valley-selective absorption. These carriers diffuse into the superjacent graphene layer, transport over a 3.5 μm distance, and are finally detected electrically using Co/h-BN contacts in a nonlocal geometry. Polarization-dependent measurements confirm the spin origin of the nonlocal signal. We also demonstrate that such signal is absent if graphene is contacted to bilayer WSe2 where the inversion symmetry is restored.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Graphene on transition-metal dichalcogenides: A platform for proximity spin-orbit physics and optospintronics

Hybrids of graphene and two-dimensional transition-metal dichalcogenides (TMDCs) have the potential to bring graphene spintronics to the next level. As we show here by performing first-principles calculations of graphene on monolayer MoS2, there are several advantages of such hybrids over pristine graphene. First, Dirac electrons in graphene exhibit a giant global proximity spin-orbit coupling,...

متن کامل

Proximity effect in graphene-topological-insulator heterostructures.

We formulate a continuum model to study the low-energy electronic structure of heterostructures formed by graphene on a strong three-dimensional topological insulator (TI) for the cases of both commensurate and incommensurate stacking. The incommensurability can be due to a twist angle between graphene and the TI surface or a lattice mismatch between the two systems. We find that the proximity ...

متن کامل

Quantum anomalous Hall effect in graphene proximity coupled to an antiferromagnetic insulator.

We propose realizing the quantum anomalous Hall effect by proximity coupling graphene to an antiferromagnetic insulator that provides both broken time-reversal symmetry and spin-orbit coupling. We illustrate our idea by performing ab initio calculations for graphene adsorbed on the (111) surface of BiFeO3. In this case, we find that the proximity-induced exchange field in graphene is about 70 m...

متن کامل

Theory of electronic and spin-orbit proximity effects in graphene on Cu(111)

We study orbital and spin-orbit proximity effects in graphene adsorbed to the Cu(111) surface by means of density functional theory (DFT). The proximity effects are caused mainly by the hybridization of graphene π and copper d orbitals. Our electronic structure calculations agree well with the experimentally observed features. We carry out a graphene-Cu(111) distance dependent study to obtain p...

متن کامل

Proximity effects in cold atom artificial graphene

Cold atoms in an optical lattice with brick-wall geometry have been used to mimic graphene, a two-dimensional material with characteristic Dirac excitations. Here we propose to bring such artificial graphene into the proximity of a second atomic layer with a square lattice geometry. For non-interacting fermions, we find that such bilayer system undergoes a phase transition from a graphene-like ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره 11  شماره 

صفحات  -

تاریخ انتشار 2017